Determination of domain wall resistance in a cobalt thin film by thickness modulation
Appl. Phys. Lett. 88, 122503 (2006); doi:10.1063/1.2186978
Published 20 March 2006
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Inspired by a well-known fact that the magnetic coercivity of a thin film has a strong dependence on its thickness, we have fabricated a 5×60 µm and 30 nm thick cobalt (Co) strip with thickness modulation along its long axis. The modulation period of 700 nm with a depth of 8 nm was prepared by a focused ion beam. From magnetic force microscope images, we observed an induced magnetic anisotropy along the short axis of the strip. By comparing out-of-plane magnetoresistance measurements in two magnetic remnant states, we extracted a positive domain wall resistance of 0.03
, corresponding to 0.14% magnetoresistance (MR) in a Co thin film.
©2006 American Institute of Physics
, corresponding to 0.14% magnetoresistance (MR) in a Co thin film.
©2006 American Institute of Physics
| History: | Received 7 January 2006; accepted 1 February 2006; published 20 March 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/88/122503/1 |
KEYWORDS and PACS
cobalt,
ferromagnetic materials,
magnetic thin films,
focused ion beam technology,
magnetic force microscopy,
coercive force,
induced anisotropy (magnetic),
enhanced magnetoresistance,
remanence,
magnetic domain walls
- 75.70.Ak
Magnetic properties of monolayers and thin films - 75.47.Np
Magnetotransport in metals and alloys - 75.60.Ej
Magnetization curves, hysteresis, Barkhausen and related effects - 75.30.Gw
Magnetic anisotropy - 75.70.Kw
Domain structure in magnetic films (magnetic bubbles) - 75.50.Cc
Ferromagnetism of nonferrous metals and alloys - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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