Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Correlation between optical properties and interface morphology of GaAs/AlGaAs quantum wells
We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°)-misoriented (001) substrates using selective etching and atomic ...
Next Article
Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals
Donor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide (ZnO) single crystals that have been ion i...

Electroluminescence at 375  nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode

Appl. Phys. Lett. 88, 141918 (2006); doi:10.1063/1.2195009

Published 6 April 2006

You are not logged in to this journal. Log in

D. J. Rogers and F. Hosseini Teherani
Nanovation SARL, 103 bis Rue de Versailles, Orsay 91400, France

A. Yasan, K. Minder, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
n-ZnO/p-GaN:Mg heterojunction light emitting diode (LED) mesas were fabricated on c-Al2O3 substrates using pulsed laser deposition for the ZnO and metal organic chemical vapor deposition for the GaN:Mg. High crystal quality and good surface morphology were confirmed by x-ray diffraction and scanning electron microscopy. Room temperature (RT) photoluminescence (PL) showed an intense main peak at 375  nm and a negligibly low green emission indicative of a near band edge excitonic emission from a ZnO layer with low dislocation/defect density. The LEDs showed I-V characteristics confirming a rectifying diode behavior and a RT electroluminescence (EL) peaked at about 375  nm. A good correlation between the wavelength maxima for the EL and PL suggests that recombination occurs in the ZnO layer and that it may be excitonic in origin. This also indicates that there is significant hole injection from the GaN:Mg into the ZnO. ©2006 American Institute of Physics
History: Received 3 June 2005; accepted 21 March 2006; published 6 April 2006
Permalink: http://link.aip.org/link/?APPLAB/88/141918/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (137 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • YEAR: 2006

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (26)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. N. Shibata, T. Uemura, H. Yamaguchi, and T. Yasukawa, Phys. Status Solidi A 200, 58 (2003).
  2. D. C. Look, B. Claflin, Y. Alivov, and S. J. Park, Phys. Status Solidi B 241, 624 (2004).
  3. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001).
  4. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
  5. H. Ohta, M. Orita, M. Hirano, and H. Hosono, J. Appl. Phys. 89, 5720 (2001).
  6. H. Hosono, H. Ohta, K. Hayashi, M. Orita, and M. Hirano, J. Cryst. Growth 237–239, 496 (2002).
  7. H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 82, 823 (2003).
  8. Y. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Appl. Phys. Lett. 83, 2943 (2003).
  9. Y. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003).
  10. A. Kudo, H. Yanagi, K. Ueda, H. Hosono, K. Kawazoe, and Y. Yano, Appl. Phys. Lett. 75, 2851 (1999).
  11. H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, Appl. Phys. Lett. 77, 475 (2000).
  12. Q.-X. Yu, Bo Xu, Qi-Hong Wu, Y. Liao, G.-Z. Wang, R.-C. Fang, H.-Y. Lee, and C.-T. Lee, Appl. Phys. Lett. 83, 4713 (2003).
  13. A. E. Tsurkan, N. D. Fedotova, L. V. Kicherman, and P. G. Pas'ko, Sov. Phys. Semicond. 6, 1183 (1975).
  14. I. T. Drapak, Sov. Phys. Semicond. 2, 624 (1968).
  15. G. Xiong, J. Wilkinson, S. Tüzemen, K. B. Ucer, and R. T. Williams, Proc. SPIE 256, 4644 (2002).
  16. A. Osinsky, J. W. Dong, M. Z. Kauser, B. Hertog, A. M. Dabiran, P. P. Chow, S. J. Pearton, O. Lopatiuk, and L. Chernyak, Appl. Phys. Lett. 85, 4272 (2004).
  17. P. Kung and M. Razeghi, Opto-Electron. Rev. 8, 3 (2000).
  18. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972).
  19. A. Ohtomo and A. Tsukazaki, Semicond. Sci. Technol. 20, S1 (2005).
  20. A. Yasan, R. McClintock, S. R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi, Appl. Phys. Lett. 80, 2108 (2002).
  21. D. J. Rogers, F. Hosseini Teherani, A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, and G. Garry, Proc. SPIE 5732, 412 (2005).
  22. R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, and K. A. Jones, Appl. Phys. Lett. 73, 348 (1998).
  23. S. Nakamura, T. Mukai, and M. Senon, Jpn. J. Appl. Phys., Part 2 30, L1998 (1991).
  24. M. Asif Khan, Q. Chen, R. A. Skogman, and J. N. Kuznia, Appl. Phys. Lett. 66, 2046 (1995).
  25. F. Calle, E. Monroy, F. J. Sanchez, E. Munoz, B. Beaumont, S. Haffouz, M. Leroux, and P. Gibart, MRS Internet J. Nitride Semicond. Res. 3, 24 (1998).
  26. J. A. Edmond, K. Das, and R. F. Davis, J. Appl. Phys. 63, 922 (1988).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics