Identification of unidirectional anisotropy in exchange-biased MnO/GaMnAs bilayers using ferromagnetic resonance
We report ferromagnetic resonance (FMR) studies of epitaxial MnO/GaMnAs bilayers. The FMR data have revealed a distinct unidirectional anisotropy about the [10] axis, which we attribute to exchange bi...
We report ferromagnetic resonance (FMR) studies of epitaxial MnO/GaMnAs bilayers. The FMR data have revealed a distinct unidirectional anisotropy about the [10] axis, which we attribute to exchange bi...
Study on vacancy formation in ferroelectric PbTiO3 from ab initio
Formation energies of possible vacancies under different oxygen partial pressures were studied using an ab initio density functional theory and supercell approach. Under oxygen-rich conditions, lead v...
Formation energies of possible vacancies under different oxygen partial pressures were studied using an ab initio density functional theory and supercell approach. Under oxygen-rich conditions, lead v...
Magnesium oxide as a candidate high-
gate dielectric
Appl. Phys. Lett. 88, 142901 (2006); doi:10.1063/1.2191419
Published 3 April 2006
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Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant () and interface traps were determined. An amorphous SiO2 layer was found at the MgO/Si interface as a result of subcutaneous Si oxidation. for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO/Si were found to be comparable with SiO2/Si, rendering MgO competitive with all presently considered high- dielectrics.
©2006 American Institute of Physics
) and interface traps were determined. An amorphous SiO2 layer was found at the MgO/Si interface as a result of subcutaneous Si oxidation. for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO/Si were found to be comparable with SiO2/Si, rendering MgO competitive with all presently considered high- dielectrics.
©2006 American Institute of Physics
| History: | Received 11 November 2005; accepted 6 March 2006; published 3 April 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/88/142901/1 |
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BibSonomy
KEYWORDS and PACS
silicon,
magnesium compounds,
silicon compounds,
high-k dielectric thin films,
dielectric materials,
elemental semiconductors,
semiconductor-insulator boundaries,
permittivity,
sputter deposition,
ellipsometry,
transmission electron microscopy,
interface states,
amorphous state,
interface structure,
oxidation
- 77.55.+f
Dielectric thin films - 77.84.Bw
Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc. - 81.15.Cd
Deposition by sputtering - 68.55.Ac
Thin film nucleation and growth: microscopic aspects - 73.20.At
Surface states, band structure, electron density of states - 73.40.Qv
Electrical properties of metal–insulator–semiconductor structures including semiconductor-to-insulator - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (6)
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