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We have developed a sensitive ultrafast technique for measuring the mobility of photocarriers in semiconductors. High-resistivity samples are photoexcited with a femtosecond laser, and carrier mobilit...

Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

Appl. Phys. Lett. 88, 162103 (2006); doi:10.1063/1.2196059

Published 17 April 2006

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J. M. O. Zide, A. Kleiman-Shwarsctein, N. C. Strandwitz, J. D. Zimmerman, T. Steenblock-Smith, and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106

A. Forman, A. Ivanovskaya, and G. D. Stucky
Chemistry Department, University of California, Santa Barbara, California 93106
We report the molecular beam epitaxy growth of Al0.3Ga0.7As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction. ©2006 American Institute of Physics
History: Received 17 November 2005; accepted 12 March 2006; published 17 April 2006
Permalink: http://link.aip.org/link/?APPLAB/88/162103/1

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KEYWORDS and PACS

Keywords
PACS
  • 84.60.Jt
    Photoelectric conversion: solar cells and arrays
  • 73.40.Lq
    Electrical properties of other semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions excluding III–V semiconductor-to-semiconductor
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (16)
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  1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
  2. C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard, Appl. Phys. Lett. 75, 3548 (1999).
  3. D. C. Driscoll, M. Hanson, C. Kadow, and A. C. Gossard, Appl. Phys. Lett. 78, 1703 (2001).
  4. A. Dorn, M. Peter, S. Kicin, T. Ihn, K. Ensslin, D. Driscoll, and A. C. Gossard, Appl. Phys. Lett. 82, 2631 (2003).
  5. D. G. Cahill, K. Goodson, and A. Majumdar, J. Heat Transfer 124, 223 (2002).
  6. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003).
  7. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri, Appl. Phys. Lett. 87, 112102 (2005).
  8. P. Pohl, F. H. Renner, M. Eckardt, A. Schwanhausser, A. Friedrich, O. Yuksekdag, S. Malzer, G. H. Dohler, P. Kiesel, D. Driscoll, M. Hanson, and A. C. Gossard, Appl. Phys. Lett. 83, 4035 (2003).
  9. J. M. Olson, S. R. Kurtz, A. E. Kibbler, and P. Faine, Appl. Phys. Lett. 56, 623 (1990).
  10. T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, Appl. Phys. Lett. 70, 381 (1997).
  11. T. Takamoto, E. Ikeda, H. Kurita, M. Ohmori, M. Yamaguchi, and Yang Ming-Ju, Jpn. J. Appl. Phys., Part 1 36, 6215 (1997).
  12. M. Y. Feteha and G. M. Eldallal, Renewable Energy 28, 1097 (2003).
  13. C. Amano, H. Sugiura, K. Ando, M. Yamaguchi, and A. Saletes, Appl. Phys. Lett. 51, 1075 (1987).
  14. C. Amano, H. Sugiura, A. Yamamoto, and M. Yamaguchi, Appl. Phys. Lett. 51, 1998 (1987).
  15. C. Amano, H. Sugiura, M. Yamaguchi, and K. Hane, IEEE Trans. Electron Devices 36, 1026 (1989).
  16. M. Yamaguchi, Sol. Energy Mater. Sol. Cells 75, 261 (2003).

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