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Hooge's constant for carbon nanotube field effect transistors

Appl. Phys. Lett. 88, 203116 (2006); doi:10.1063/1.2206685

Published 18 May 2006

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Masa Ishigami, J. H. Chen, and E. D. Williams
Department of Physics, University of Maryland, College Park, College Park, Maryland 20742

David Tobias, Y. F. Chen, and M. S. Fuhrer
Department of Physics and Center for Superconductivity Research, University of Maryland, College Park, College Park, Maryland 20742
The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultrahigh vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current and inversely proportional to gate voltage, to channel length, and therefore to carrier number, indicating that the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be (9.3±0.4)×10–3 The magnitude of the 1/f noise is substantially decreased by exposing the devices to air. ©2006 American Institute of Physics
History: Received 19 January 2006; accepted 12 April 2006; published 18 May 2006
Permalink: http://link.aip.org/link/?APPLAB/88/203116/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 72.70.+m
    Noise processes and phenomena in electronic transport
  • 85.35.Kt
    Nanotube devices
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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