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Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers

Appl. Phys. Lett. 88, 241918 (2006); doi:10.1063/1.2210794

Published 14 June 2006

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H. Knotz, A. W. Holleitner, J. Stephens, R. C. Myers, and D. D. Awschalom
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically detected nuclear magnetic resonance spectroscopies. The band gap, electron spin lifetime, electron g factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain-induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically detected nuclear magnetic resonance. ©2006 American Institute of Physics
History: Received 22 November 2005; accepted 27 April 2006; published 14 June 2006
Permalink: http://link.aip.org/link/?APPLAB/88/241918/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 78.47.+p
    Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
  • 76.60.-k
    Nuclear magnetic resonance and relaxation (condensed matter)
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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