Temperature dependent characteristics of
~3.8 µm room-temperature continuous-wave quantum-cascade lasers
Appl. Phys. Lett. 88, 251118 (2006); doi:10.1063/1.2216024
Published 23 June 2006
You are not logged in to this journal. Log in
Temperature dependent characteristics of
~3.8 µm quantum-cascade lasers (QCLs) operating up to 318 K in continuous-wave (cw) mode are reported. A high-reflectivity coated 11.5-µm-wide and 4-mm-long epilayer-down bonded QCL using a diamond submount shows a considerable improved cw operation with an output power of 143 mW and a threshold current density of 1.51 kA/cm2 at 298 K. The temperature dependence on optical and electrical performances of the QCLs with respect to the output power, slope efficiency, threshold current/voltage, turn-on voltage, differential series resistance, and emission wavelength are investigated systematically above liquid nitrogen temperature.
©2006 American Institute of Physics
~3.8 µm quantum-cascade lasers (QCLs) operating up to 318 K in continuous-wave (cw) mode are reported. A high-reflectivity coated 11.5-µm-wide and 4-mm-long epilayer-down bonded QCL using a diamond submount shows a considerable improved cw operation with an output power of 143 mW and a threshold current density of 1.51 kA/cm2 at 298 K. The temperature dependence on optical and electrical performances of the QCLs with respect to the output power, slope efficiency, threshold current/voltage, turn-on voltage, differential series resistance, and emission wavelength are investigated systematically above liquid nitrogen temperature.
©2006 American Institute of Physics
| History: | Received 6 March 2006; accepted 5 May 2006; published 23 June 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/88/251118/1 |
KEYWORDS and PACS
quantum cascade lasers,
semiconductor device measurement,
laser variables measurement,
current density,
thermo-optical devices
- 42.55.Px
Semiconductor lasers; laser diodes - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (9)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- J. S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi,
IEEE Photon. Technol. Lett. 16, 747 (2004) . - J. S. Yu, S. R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi, Appl. Phys. Lett. 88, 041111 (2006).
- J. S. Yu, S. Slivken, A. Evans, S. R. Darvish, J. Nguyen, and M. Razeghi, Appl. Phys. Lett. 88, 043609 (2006).
- J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, and A. Cho, Appl. Phys. Lett. 72, 680 (1998).
- M. Kim, W. W. Bewley, J. R. Lindle, C. S. Kim, I. Vurgaftman, J. R. Meyer, J. G. K. Kim, and R. U. Martinelli, Appl. Phys. Lett. 83, 5374 (2003).
- R. Q. Yang, C. J. Hill, and B. Yang, Appl. Phys. Lett. 87, 151109 (2005).
- M. Razeghi, A. Evans, S. Slivken, and J. S. Yu,
Proc. SPIE 5738, 1 (2005) . - C. Gmachl, F. Capasso, A. Tredicucci, D. L. Sivco, R. K
hler, A. L. Hutchnson, and A. Y. Cho,
IEEE J. Sel. Top. Quantum Electron. 5, 808 (1999) . - W. W. Bewley, J. R. Lindle, C. S. Kim, I. Vurgaftman, J. R. Meyer, A. J. Evans, J. S. Yu, S. Slivken, and M. Razeghi, Int. J. Quantum Chem. 41, 833 (2005).







