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Thermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers

Appl. Phys. Lett. 89, 011110 (2006); doi:10.1063/1.2219721

Published 7 July 2006

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P. K. L. Chan and K. P. Pipe
Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125

Z. Mi, J. Yang, and P. Bhattacharya
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109–2122

D. Lüerßen
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Using a charge coupled device-based thermoreflectance technique, we achieve a high-resolution (~700  nm) cross-sectional temperature profile of a semiconductor laser. This two-dimensional profile allows us to identify separate heat sources due to contact heating and nonradiative recombination in the active region. By adapting the technique to pulsed operation and varying the laser's duty cycle, we measure the thermal relaxation time constant. We also quantitatively determine the heat transfer from device-internal heat sources and demonstrate both the large effect of lateral heat spreading and the distinction between a laser's top surface temperature and its active region temperature. ©2006 American Institute of Physics
History: Received 18 December 2005; accepted 19 May 2006; published 7 July 2006
Permalink: http://link.aip.org/link/?APPLAB/89/011110/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.By
    Design of specific laser systems
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)

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