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Nonlinear optical transitions of GaAs/AlGaAs asymmetric double-well structures

Appl. Phys. Lett. 89, 032114 (2006); doi:10.1063/1.2220533

Published 21 July 2006

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E. H. Kim, Y. H. Shin, Yongmin Kim, and S. J. Noh
Department of Applied Physics, Institute of Nanoscience and Biotechnology, Dankook University, Seoul 140-714, Korea

C. H. Perry
Department of Physics, Northeastern University, Boston, Massachusetts 02115

J. A. Simmons
Sandia National Laboratories, Albuquerque, New Mexico 87185

S. A. Crooker
National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545

T. Takamasu
National Institute for Materials Science, Tsukuba, Ibaraki 305-0003, Japan
A thin AlGaAs barrier (2.5  nm) inserted into a GaAs/AlGaAs single heterojunction formed a square and a wedge-shaped triangular quantum well in the conduction band. In such a structure, the valence band does not have tunnel-coupled energy levels. Hence, the photogenerated valence holes tend to move to the GaAs flatband region. This asymmetric quantum structure showed intense nonlinear photoluminescence emission behavior with external excitation power and magnetic field. Increasing the external laser power simply caused the number of photogenerated holes to increase near the interface close to the quantum well, which then recombined with the conduction band electrons. External magnetic fields resulted in an increased Coulomb attraction which generated dynamic movement of valence holes. The migration of unbound holes to the interface region from the GaAs flatband area produced highly nonlinear optical transitions in magnetic fields. ©2006 American Institute of Physics
History: Received 24 November 2005; accepted 23 May 2006; published 21 July 2006
Permalink: http://link.aip.org/link/?APPLAB/89/032114/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.De
    Optical properties of quantum wells
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 42.65.-k
    Nonlinear optics
  • 42.70.Nq
    Other nonlinear optical materials; photorefractive and semiconductor materials
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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