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Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

Appl. Phys. Lett. 89, 072904 (2006); doi:10.1063/1.2337002

Published 17 August 2006

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Chao Sung Lai
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan

Woei Cherng Wu and Tien Sheng Chao
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

Jian Hao Chen
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

Jer Chyi Wang
Nanya Technology Corporation, Hwa-Ya Technology Park, 669 Fu-Hsing 3rd Rd., Kueishan, Taoyuan 338, Taiwan

Li-Lin Tay and Nelson Rowell
Institute for Microstructural Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada
In this letter, the effects of pre-CF4 plasma treatment on Si for sputtered HfO2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO2/Si substrate interface for a sample with the CF4 plasma pretreatment. The Hf silicide was suppressed and Hf–F bonding was observed for the CF4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF4 plasma treated sample due to the elimination of the interfacial layer between HfO2 and Si substrate. These improved characteristics of the HfO2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO2 film into the Si substrate. ©2006 American Institute of Physics
History: Received 3 April 2006; accepted 27 June 2006; published 17 August 2006
Permalink: http://link.aip.org/link/?APPLAB/89/072904/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.55.+f
    Dielectric thin films
  • 52.77.-j
    Plasma applications
  • 81.65.-b
    Surface treatments
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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