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Large capacitance in the nanosecond-scale transient response of quantum point contacts

Appl. Phys. Lett. 89, 083103 (2006); doi:10.1063/1.2337865

Published 21 August 2006

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B. Naser and D. K. Ferry
Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706

J. Heeren
General Dynamics C4 Systems, 8220 E. Roosevelt Street, Scottsdale, Arizona 85257

J. L. Reno
Nanostructure and Semiconductor Physics Department, Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1415

J. P. Bird
Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14216
The transient electrical response of split-gate quantum point contacts (QPCs) is investigated using ultrashort voltage pulses with rise times as small as 2  ns. Our measurements reveal a large (~1  nF) parallel capacitance under conditions where the QPC is formed. The capacitance is independent of the QPC gate geometry, and the amplitude and rise time of the applied transient pulse. Some speculations on the source of this capacitance are offered. ©2006 American Institute of Physics
History: Received 13 April 2006; accepted 29 June 2006; published 21 August 2006
Permalink: http://link.aip.org/link/?APPLAB/89/083103/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Lq
    Electrical properties of other semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions excluding III–V semiconductor-to-semiconductor
  • 73.63.Rt
    Nanoscale contacts (electronic transport)
  • 73.23.-b
    Electronic transport in mesoscopic systems
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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