Linking compaction dynamics to the flow properties of powders
The authors have investigated the flow properties of powders by using two classical techniques based on the shear stress measurements and the count of intermittent avalanches, respectively. Results ar...
The authors have investigated the flow properties of powders by using two classical techniques based on the shear stress measurements and the count of intermittent avalanches, respectively. Results ar...
Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors
The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP fil...
The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP fil...
High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared
Appl. Phys. Lett. 89, 093506 (2006); doi:10.1063/1.2345020
Published 31 August 2006
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Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 µm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 µm exhibit an R0A of ~7 
cm2 and a Johnson-limited detectivity of 4.03×1010 cm Hz1/2 W–1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 µm.
©2006 American Institute of Physics
cm2 and a Johnson-limited detectivity of 4.03×1010 cm Hz1/2 W–1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 µm.
©2006 American Institute of Physics
| History: | Received 14 June 2006; accepted 20 July 2006; published 31 August 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/89/093506/1 |
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BibSonomy
KEYWORDS and PACS
indium compounds,
gallium compounds,
III-V semiconductors,
semiconductor superlattices,
photodiodes,
electric resistance,
diffusion,
minority carriers,
carrier lifetime
- 85.60.Dw
Photodiodes; phototransistors; photoresistors - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (9)
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