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Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

Appl. Phys. Lett. 89, 102102 (2006); doi:10.1063/1.2345608

Published 5 September 2006

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M. Furis, D. L. Smith, and S. A. Crooker
Los Alamos National Laboratory, Los Alamos, New Mexico 87545

J. L. Reno
Sandia National Laboratories, Department 1123, MS 1315, Albuquerque, New Mexico 87185
In bulk n-GaAs epilayers doped near the metal-insulator transition, the authors study the evolution of electron spin lifetime taus as a function of applied lateral electrical bias Ex. taus is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10  K, where electrons are partially localized and taus>100  ns at zero bias), a marked collapse of taus is observed when Ex exceeds the donor impact ionization threshold at ~10  V/cm. A steep increase in the concentration of warm delocalized electrons—subject to Dyakonov-Perel spin relaxation [Sov. Phys. Solid State 13, 3023 (1972)]—accounts for the rapid collapse of taus and strongly influences electron spin transport in this regime. ©2006 American Institute of Physics
History: Received 22 May 2006; accepted 16 July 2006; published 5 September 2006
Permalink: http://link.aip.org/link/?APPLAB/89/102102/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 72.80.Ey
    Electrical conductivity of III–V and II–VI semiconductors
  • 72.20.Ht
    High-field transport and nonlinear effects (semiconductors/insulators)
  • 72.60.+g
    Mixed conductivity and conductivity transitions
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (20)
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  1. Semiconductor Spintronics and Quantum Computation, edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer, Berlin, 2002), pp. 107–192.
  2. J. M. Kikkawa and D. D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998).
  3. R. I. Dzhioev, V. L. Korenev, I. A. Merkulov, B. P. Zakharchenya, D. Gammon, Al. L. Efros, and D. S. Katzer, Phys. Rev. Lett. 88, 256801 (2002).
  4. R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Y. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, and D. S. Katzer, Phys. Rev. B 66, 245204 (2002).
  5. J. S. Colton, T. A. Kennedy, A. S. Bracker, and D. Gammon, Phys. Rev. B 69, 121307 (2004).
  6. D. Hagele, M. Oestreich, W. W. Ruhle, N. Nestle, and K. Eberl, Appl. Phys. Lett. 73, 1580 (1998).
  7. X. Jiang, R. Wang, S. Van Dijken, R. Shelby, R. Macfarlane, G. S. Solomon, J. Harris, and S. S. P. Parkin, Phys. Rev. Lett. 90, 256603 (2003).
  8. Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Science 306, 1910 (2004).
  9. J. Stephens, J. Berezovsky, J. P. McGuire, L. J. Sham, A. C. Gossard, and D. D. Awschalom, Phys. Rev. Lett. 93, 097602 (2004).
  10. C. H. Li, G. Kioseoglou, O. M. J. van't Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 85, 1544 (2004).
  11. S. A. Crooker, M. Furis, X. Lou, C. Adelmann, D. L. Smith, C. J. Palmstrøm, and P. A. Crowell, Science 309, 2191 (2005).
  12. X. Lou, C. Adelman, M. Furis, S. A. Crooker, C. J. Palmstrøm, and P. A. Crowell, Phys. Rev. Lett. 96, 176603 (2006).
  13. R. A. Reynolds, Solid-State Electron. 11, 385 (1968).
  14. D. J. Oliver, Phys. Rev. 127, 1045 (1962).
  15. Optical Orientation, edited by F. Meier and B. Zakharchenya (North-Holland, Amsterdam, 1984), pp. 11–73.
  16. S. A. Crooker and D. L. Smith, Phys. Rev. Lett. 94, 236601 (2005).
  17. M. I. Dyakonov and V. I. Perel, Sov. Phys. Solid State 13, 3023 (1972).
  18. M. Beck, C. Metzner, S. Malzer, and G. H. Döhler,Europhys. Lett.75, 597 (2006).
  19. Z. G. Yu and M. E. Flatté, Phys. Rev. B 66, 201202(R) (2002).
  20. D. Paget, G. Lampel, B. Sapoval, and V. I. Safarov, Phys. Rev. B 15, 5780 (1977).

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