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Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

Appl. Phys. Lett. 89, 102102 (2006); doi:10.1063/1.2345608

Published 5 September 2006

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M. Furis, D. L. Smith, and S. A. Crooker
Los Alamos National Laboratory, Los Alamos, New Mexico 87545

J. L. Reno
Sandia National Laboratories, Department 1123, MS 1315, Albuquerque, New Mexico 87185
In bulk n-GaAs epilayers doped near the metal-insulator transition, the authors study the evolution of electron spin lifetime taus as a function of applied lateral electrical bias Ex. taus is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10  K, where electrons are partially localized and taus>100  ns at zero bias), a marked collapse of taus is observed when Ex exceeds the donor impact ionization threshold at ~10  V/cm. A steep increase in the concentration of warm delocalized electrons—subject to Dyakonov-Perel spin relaxation [Sov. Phys. Solid State 13, 3023 (1972)]—accounts for the rapid collapse of taus and strongly influences electron spin transport in this regime. ©2006 American Institute of Physics
History: Received 22 May 2006; accepted 16 July 2006; published 5 September 2006
Permalink: http://link.aip.org/link/?APPLAB/89/102102/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 72.80.Ey
    Electrical conductivity of III–V and II–VI semiconductors
  • 72.20.Ht
    High-field transport and nonlinear effects (semiconductors/insulators)
  • 72.60.+g
    Mixed conductivity and conductivity transitions
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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