Applied Physics Letters
   
 
 
 
Previous Article
Direct observation of waveguide formation in KGd(WO4)2 by low dose H+ ion implantation
In this letter, a direct measurement of a refractive index change in potassium gadolinium tungstate (KGW) created by a low-dose ion implantation of 1  MeV hydrogen ions is reported. The char...
Next Article
Lateral light emitting n-i-p diodes in InSb/AlxIn1–xSb quantum wells
Lateral light emitting diodes have been fabricated in InSb/AlxIn1–xSb quantum wells using a simple bevel etching technique. The peak in emission was found to be in the range of 4–5 &nbs...

Organic light-emitting device on a scanning probe cantilever

Appl. Phys. Lett. 89, 111117 (2006); doi:10.1063/1.2353816

Published 14 September 2006

You are not logged in to this journal. Log in

Kwang H. An, Brendan O'Connor, and Kevin P. Pipe
Department of Mechanical Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2125

Yiying Zhao and Max Shtein
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2125
Organic light-emitting devices (OLEDs) were fabricated on scanning probe cantilevers using a combination of thermally evaporated molecular organic compounds and metallic electrodes. Ion beam milling was used to define the emissive region in the shape of a ring having a diameter of less than 5  µm and a narrow width. Stable light emission was observed from the device at forward bias, with a current-voltage response similar to that of archetypal OLEDs. Based on this device, a novel electrically pumped scanning optical microscopy tool is suggested. ©2006 American Institute of Physics
History: Received 20 May 2006; accepted 20 July 2006; published 14 September 2006
Permalink: http://link.aip.org/link/?APPLAB/89/111117/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (176 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 85.40.Hp
    Lithography, masks and pattern transfer (microelectronics)
  • 07.79.-v
    Scanning probe microscopes and components
  • YEAR: 2006

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (27)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. E. Betzig and J. K. Trautman, Science 257, 189 (1992).
  2. R. Bachelot, G. Lerondel, S. Blaize, S. Aubert, A. Bruyant, and P. Royer, Microsc. Res. Tech. 64, 441 (2004).
  3. W. Dickson, A. Stashkevitch, J. Ben Youssef, S. Takahashi, and A. V. Zayats, Opt. Commun. 250, 126 (2005).
  4. D. Mulin, C. Girard, G. C. Des Francs, M. Spajer, and D. Courjon, J. Microsc. 202, 110 (2001).
  5. S. I. Bozhevolnyi, V. S. Volkov, T. Sondergaard, A. Boltasseva, P. I. Borel, and M. Kristensen, Phys. Rev. B 66, 235204 (2002).
  6. M. Denyer, R. Micheletto, K. Nakajima, M. Hara, and S. Okazaki, J. Nanosci. Nanotechnol. 3, 496 (2003).
  7. E. Betzig and R. J. Chichester, Science 262, 1422 (1993).
  8. P. Grabiec, J. Radojewski, M. Zaborowski, K. Domanski, T. Schenkel, and I. W. Rangelow, J. Vac. Sci. Technol. B 22, 16 (2004).
  9. C. Mihalcea, W. Scholz, S. Werner, S. Munster, E. Oesterschulze, and R. Kassing, Appl. Phys. Lett. 68, 3531 (1996).
  10. S. S. Choi, M. S. Song, D. W. Kim, and M. J. Park, Appl. Phys. A: Mater. Sci. Process. 79, 1189 (2004).
  11. M. Sasaki, K. Tanaka, and K. Hane, Jpn. J. Appl. Phys., Part 1 39, 7150 (2000).
  12. S. Heisig, O. Rudow, and E. Oesterschulze, Appl. Phys. Lett. 77, 1071 (2000).
  13. H. Kroemer, J. Cryst. Growth 81, 193 (1987).
  14. N. Iwata, T. Wakayama, and S. Yamada, Sens. Actuators, A 111, 26 (2004).
  15. P. E. Burrows, Y. Zhang, E. I. Haskal, and S. R. Forrest, Appl. Phys. Lett. 61, 2417 (1992).
  16. S. R. Forrest, Chem. Rev. (Washington, D.C.) 97, 1793 (1997).
  17. D. Suh and H. H. Lee, J. Vac. Sci. Technol. B 22, 1123 (2004).
  18. H. Yamamoto, J. Wilkinson, J. P. Long, K. Bussman, J. A. Christodoulides, and Z. H. Kafafi, Nano Lett. 5, 2485 (2005).
  19. F. A. Boroumand, P. W. Fry, and D. G. Lidzey, Nano Lett. 5, 67 (2005).
  20. A. Wang, L. Kymissis, V. Bulovic, and A. I. Akinwande, IEEE Trans. Electron Devices 53, 9 (2006).
  21. E. Artukovic, M. Kaempgen, D. S. Hecht, S. Roth, and G. Gruner, Nano Lett. 5, 757 (2005).
  22. M. A. Baldo and S. R. Forrest, Phys. Rev. B 64, 085201 (2001).
  23. H. Shiba, M. Haraguchi, and M. Fukui, J. Phys. Soc. Jpn. 63, 1400 (1994).
  24. R. Zia, M. D. Selker, and M. L. Brongersma, Phys. Rev. B 71, 165431 (2005).
  25. P. Andrew and W. L. Barnes, Science 306, 1002 (2004).
  26. U. C. Fischer and D. W. Pohl, Phys. Rev. Lett. 62, 458 (1989).
  27. A. A. Shoustikov, Y. J. You, and M. E. Thompson, IEEE J. Sel. Top. Quantum Electron. 4, 3 (1998).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.