Large external
T and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices
Appl. Phys. Lett. 89, 122117 (2006); doi:10.1063/1.2353805
Published 22 September 2006
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Experimental I-V-Tc-
T data of thin-film superlattice thermoelectric modules is used to determine the internal
T, cross-plane Seebeck coefficient, effective thermal interface resistance, device ZT, and Qmax. We demonstrate 55 K of external cooling at 300 K (Tcmin=244.8 K), with an estimated heat pumping capacity of 128 W/cm2. The average ZT300 for the best superlattice devices is 0.75, compared to 0.66 for a bulk BixSb2xTe3/Bi2SexTe3x device. Our model indicates a significantly higher internal
T occurs across the active thermoelectric element, which was verified using buried thermocouples.
©2006 American Institute of Physics
T data of thin-film superlattice thermoelectric modules is used to determine the internal
T, cross-plane Seebeck coefficient, effective thermal interface resistance, device ZT, and Qmax. We demonstrate 55 K of external cooling at 300 K (Tcmin=244.8 K), with an estimated heat pumping capacity of 128 W/cm2. The average ZT300 for the best superlattice devices is 0.75, compared to 0.66 for a bulk BixSb2xTe3/Bi2SexTe3x device. Our model indicates a significantly higher internal
T occurs across the active thermoelectric element, which was verified using buried thermocouples.
©2006 American Institute of Physics
| History: | Received 22 December 2005; accepted 16 July 2006; published 22 September 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/89/122117/1 |
KEYWORDS and PACS
bismuth alloys,
tellurium alloys,
antimony alloys,
selenium alloys,
superlattices,
thermoelectric devices,
thin film devices,
Seebeck effect,
thermal resistance,
cooling
- 85.80.Fi
Thermoelectric devices - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (14)
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