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Stress relaxation during the growth of 3C-SiC/Si thin films

Appl. Phys. Lett. 89, 131906 (2006); doi:10.1063/1.2357569

Published 25 September 2006

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M. Zielinski, A. Leycuras, and S. Ndiaye
CNRS-CRHEA, rue Bernard Gregory, 06560 Valbonne, France

T. Chassagne
NOVASiC, Savoie Technolac, Arche Bt. 4, BP 267, 73375 Le Bourget du Lac Cedex, France
In this work the authors study the strain of 3C-SiC thin films grown on (001) on-axis silicon substrates. They use ex situ wafer curvature measurements to monitor the residual strain of silicon carbide film. At high temperature creep effects take place and modify the intrinsic strain of silicon carbide film. From the time and temperature dependences of these effects, they determine the creep exponent and the creep activation energy for 3C-SiC. Obtained values of N=2.6±0.3 and Q=5.6±1.0  eV are similar to those reported in literature for hexagonal polytypes of silicon carbide. ©2006 American Institute of Physics
History: Received 28 March 2006; accepted 7 August 2006; published 25 September 2006
Permalink: http://link.aip.org/link/?APPLAB/89/131906/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.40.Jj
    Elasticity and anelasticity, stress-strain relations
  • 62.40.+i
    Anelasticity, internal friction, stress relaxation, and mechanical resonances
  • 62.20.-x
    Mechanical properties of solids
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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