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High-mobility AlAs quantum wells with out-of-plane valley occupation

Appl. Phys. Lett. 89, 172118 (2006); doi:10.1063/1.2370504

Published 27 October 2006

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K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Padmanabhan, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5  m2/V  s with out-of-plane occupation, an order of magnitude improvement over previous studies. However, from the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the implementation of a technique utilizing thermally induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8  m2/V  s. ©2006 American Institute of Physics
History: Received 16 May 2006; accepted 15 September 2006; published 27 October 2006
Permalink: http://link.aip.org/link/?APPLAB/89/172118/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 68.65.Fg
    Quantum wells (structure and nonelectronic properties)
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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