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Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In0.53Ga0.47As

Appl. Phys. Lett. 89, 192110 (2006); doi:10.1063/1.2382731

Published 10 November 2006

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Simon Perraud
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan and Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France

Kiyoshi Kanisawa
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Zhao-Zhong Wang
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France

Yoshiro Hirayama
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan; SORST-JST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012, Japan; and Department of Physics, Tohoku University, Sendai 980-8578, Japan
Low-temperature scanning tunneling spectroscopy under ultrahigh vacuum was employed to investigate the (111)A clean surface of n-type In0.53Ga0.47As, grown by molecular beam epitaxy on lattice-matched InP substrates. It was found that the surface Fermi level is located in the conduction band, close to the bulk Fermi level, and can be controlled by varying the dopant concentration in the bulk. This observation was confirmed by determining the dispersion relation of electron standing waves resulting from scattering interferences. Such an unpinning of the surface Fermi level strongly contrasts with the pinning phenomenon observed at the (001) clean surface. ©2006 American Institute of Physics
History: Received 29 June 2006; accepted 18 September 2006; published 10 November 2006
Permalink: http://link.aip.org/link/?APPLAB/89/192110/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.20.At
    Surface states, band structure, electron density of states
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM
  • 61.72.Ss
    Impurity concentration, distribution, and gradients
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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