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Temperature mapping and thermal lensing in large-mode, high-power laser diodes

Appl. Phys. Lett. 89, 201110 (2006); doi:10.1063/1.2388884

Published 16 November 2006

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P. K. L. Chan and K. P. Pipe
Solid State Thermal Physics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2025

J. J. Plant, R. B. Swint, and P. W. Juodawlkis
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108
The authors use high-resolution charge-coupled device based thermoreflectance to derive two dimensional facet temperature maps of a lambda=1.55  µm InGaAsP/InP watt-class laser that has a large (>5×5  µm2) fundamental optical mode. Recognizing that temperature rise in the laser will lead to refractive index increase, they use the measured temperature profiles as an input to a finite-element mode solver, predicting bias-dependent spatial mode behavior that agrees well with experimental observations. These results demonstrate the general usefulness of high-resolution thermal imaging for studying spatial mode dynamics in photonic devices. ©2006 American Institute of Physics
History: Received 1 July 2006; accepted 9 October 2006; published 16 November 2006
Permalink: http://link.aip.org/link/?APPLAB/89/201110/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.By
    Design of specific laser systems
  • 07.57.Kp
    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (15)
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