Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Planar nanoscale architecture for organic thin-film field-effect transistors
A nanoscale architecture for an organic thin-film field-effect transistor is presented. It comprises an aluminum gate electrode, which forms its own oxide in air, placed near a titanium/gold source, a...
Next Article
Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices
High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations ...

Self-assembly of ultrafine nanolines upon Ho reaction with the Ge(001) surface

Appl. Phys. Lett. 89, 203119 (2006); doi:10.1063/1.2390636

Published 17 November 2006

You are not logged in to this journal. Log in

C. Bonet and S. P. Tear
Department of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
The reaction of the rare earth metal Ho with the Ge(001) surface at 440  °C has been studied by scanning tunneling microscopy (STM). The self-assembly of ultrafine nanolines growing along substrate <110> directions has been observed, and based on atomic resolution STM images, the authors propose a model of the nanolines and comment on their relationship to the very initial stages of growth of a hexagonal germanide structure. The authors further report the presence of nanoscale trenches associated with well-ordered lines of missing dimer defects and discuss the relationship of these to the nanolines. Their results have possible applications involving interconnects or templating in nanoscale devices, and additionally, may provide insight into the nucleation mechanism of coarser nanowires. ©2006 American Institute of Physics
History: Received 28 July 2006; accepted 10 October 2006; published 17 November 2006
Permalink: http://link.aip.org/link/?APPLAB/89/203119/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (258 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 81.16.Dn
    Self-assembly in nanofabrication and processing
  • 61.46.-w
    Nanoscale materials
  • YEAR: 2006

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. Knapp and S. Picraux, Appl. Phys. Lett. 48, 466 (1986).
  2. K. N. Tu, R. D. Thompson, and B. Y. Tsaur, Appl. Phys. Lett. 38, 626 (1981).
  3. H. Norde, J. de Sousa Pires, F. d'Heurle, F. Pesavento, S. Petersson, and P. A. Tove, Appl. Phys. Lett. 38, 865 (1981).
  4. Y. Chen, D. A. A. Ohlberg, G. Medeiros-Ribeiro, Y. A. Chang, and R. S. Williams, Appl. Phys. Lett. 76, 4004 (2000).
  5. C. Preinesberger, S. Vandré, T. Kalaka, and M. Dähne-Prietsch, J. Phys. D 31, L43 (1998).
  6. O. Kubo, Y. Shingaya, M. Aono, and T. Nakayama, Appl. Phys. Lett. 88, 233117 (2006).
  7. J. E. E. Baglin, F. M. d'Heurle, and C. S. Petersson, J. Appl. Phys. 52, 2841 (1981).
  8. S. L. Liew, B. Balakrisnan, S. Y. Chow, M. Y. Lai, W. D. Wang, K. Y. Lee, C. S. Ho, T. Osipowicz, and D. Z. Chi, Thin Solid Films 504, 81 (2006).
  9. J. Nogami, B. Z. Liu, M. V. Katkov, C. Ohbuchi, and N. O. Birge, Phys. Rev. B 63, 233305 (2001).
  10. C. Bonet, D. J. Spence, and S. P. Tear, Surf. Sci. 504, 183 (2002).
  11. It should be noted that the Ho/Si(001) study referred to involved temperatures at which rare earth silicide nanowires were known to form and which were higher than the temperatures employed in the present study.
  12. C. Ohbuchi and J. Nogami, Phys. Rev. B 66, 165323 (2002).
  13. J. H. G. Owen, K. Miki, and D. R. Bowler, J. Mater. Sci. 41, 4568 (2006).
  14. J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom, and D. R. Bowler, Phys. Rev. Lett. 88, 226104 (2002).
  15. J. Wang, T. A. Arias, and J. D. Joannopoulos, Phys. Rev. B 47, 10497 (1993).
  16. C. V. Ciobanu, D. T. Tambe, and V. B. Shenoy, Surf. Sci. 556, 171 (2004).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics