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Coercive fields in ultrathin BaTiO3 capacitors

Appl. Phys. Lett. 89, 232909 (2006); doi:10.1063/1.2402238

Published 8 December 2006

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J. Y. Jo, Y. S. Kim, and T. W. Noh
ReCOE and FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

Jong-Gul Yoon
Department of Physics, University of Suwon, Suwon, Gyunggi-do 445-743, Korea

T. K. Song
School of Nano and Advanced Materials Engineering, Changwon National University, Changwon, Gyeongnam 641-773, Korea
Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5.0  nm. The EC appears nearly independent of d below 15  nm, and decreases slowly as d increases above 15  nm. This behavior can be explained not by effects of interfacial passive layers or strain relaxation, but by domain nuclei formation models. Based on domain nuclei formation models, the observed EC behavior is explainable via a quantitative level. A crossover of domain shape from a half-prolate spheroid to a cylinder is also suggested at d~15  nm, exhibiting good agreement with experimental results. ©2006 American Institute of Physics
History: Received 18 August 2006; accepted 19 October 2006; published 8 December 2006
Permalink: http://link.aip.org/link/?APPLAB/89/232909/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.50.-n
    Dielectric, ferroelectric, and piezoelectric devices
  • 84.32.Tt
    Capacitors
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (21)
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  1. J. F. Scott, Ferroelectric Memories (Springer, New York, 2000).
  2. J. F. M. Cillessen, M. W. J. Prins, and R. W. Wolf, J. Appl. Phys. 81, 2777 (1997).
  3. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
  4. A. K. Tagantsev and I. A. Stolichnov, Appl. Phys. Lett. 74, 1326 (1999).
  5. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, J. Appl. Phys. 78, 2623 (1995).
  6. N. Yanase, K. Abe, N. Fukushima, and T. Kawakubo, Jpn. J. Appl. Phys., Part 1 38, 5305 (1999).
  7. N. A. Pertsev, J. Rodríguez Contréras, V. G. Kukhar, B. Hermanns, H. Kohlstedt, and R. Waser, Appl. Phys. Lett. 83, 3356 (2003).
  8. S. Ducharme, V. M. Fridkin, A. V. Bune, S. P. Palto, L. M. Blinov, N. N. Petukhova, and S. G. Yudin, Phys. Rev. Lett. 84, 175 (2000).
  9. A. M. Bratkovsky and A. P. Levanyuk, Phys. Rev. Lett. 87, 019701 (2001).
  10. R. L. Moreira, Phys. Rev. Lett. 88, 179701 (2002).
  11. R. Landauer, J. Appl. Phys. 28, 227 (1957).
  12. H. F. Kay and J. W. Dunn, Philos. Mag. 7, 2027 (1962).
  13. Y. S. Kim, D. H. Kim, J. D. Kim, Y. J. Chang, T. W. Noh, J. H. Kong, K. Char, Y. D. Park, S. D. Bu, J.-G. Yoon, and J.-S. Chung, Appl. Phys. Lett. 86, 102907 (2005).
  14. Y. S. Kim, J. Y. Jo, D. J. Kim, Y. J. Chang, J. H. Lee, T. W. Noh, T. K. Song, J.-G. Yoon, J.-S. Chung, S. I. Baik, Y.-W. Kim, and C. U. Chung, Appl. Phys. Lett. 88, 072909 (2006).
  15. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998).
  16. R. Mehta, B. D. Silverman, and J. T. Jacobs, J. Appl. Phys. 44, 3379 (1973).
  17. D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, Jong-Gul Yoon, T. K. Song, and T. W. Noh, Phys. Rev. Lett. 95, 237602 (2005).
  18. T. Tybell, P. Paruch, T. Giamarchi, and J.-M. Triscone, Phys. Rev. Lett. 89, 097601 (2002).
  19. J. Y. Jo, D. J. Kim, Y. S. Kim, S.-B. Choe, T. K. Song, J.-G. Yoon, and T. W. Noh, Phys. Rev. Lett. (in press).
  20. Z.-G. Ban and S. P. Alpay, J. Appl. Phys. 91, 9288 (2002).
  21. J. Padilla, W. Zhong, and D. Vanderbilt, Phys. Rev. B 53, R5969 (1996).

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