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Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

Appl. Phys. Lett. 89, 233521 (2006); doi:10.1063/1.2402947

Published 8 December 2006

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Paddy K. L. Chan and Kevin P. Pipe
Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125

Guoxuan Qin and Zhenqiang Ma
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
By generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current. ©2006 American Institute of Physics
History: Received 27 September 2006; accepted 21 October 2006; published 8 December 2006
Permalink: http://link.aip.org/link/?APPLAB/89/233521/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Pq
    Bipolar transistors
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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