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Mesoscopic conductance effects in InMnAs structures

Appl. Phys. Lett. 90, 032105 (2007); doi:10.1063/1.2432165

Published 16 January 2007

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S. Lee and A. Trionfi
Department of Physics and Astronomy, Rice University, Houston, Texas 77005

T. Schallenberg and H. Munekata
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan

D. Natelson
Department of Physics and Astronomy, Rice University, Houston, Texas 77005
Quantum corrections to the electrical conduction of magnetic semiconductors are comparatively unexplored. The authors report measurements of time-dependent universal conductance fluctuations (TDUCFs) and magnetic field dependent universal conductance fluctuations (MFUCFs) in micron-scale structures fabricated from two different In1−xMnxAs thin films. TDUCF and MFUCF increasing in magnitude with decreasing temperature are observed. At 4  K and below, TDUCFs are suppressed at finite magnetic fields independent of field orientation. ©2007 American Institute of Physics
History: Received 6 November 2006; accepted 11 December 2006; published 16 January 2007
Permalink: http://link.aip.org/link/?APPLAB/90/032105/1
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Supplemental Material

KEYWORDS and PACS

Keywords
PACS
  • 73.23.-b
    Electronic transport in mesoscopic systems
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 75.50.Pp
    Magnetic semiconductors
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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