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Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

Appl. Phys. Lett. 90, 033103 (2007); doi:10.1063/1.2431760

Published 16 January 2007

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Levente J. Klein, Donald E. Savage, and Mark A. Eriksson
University of Wisconsin, Madison, Wisconsin 53706
Transport measurements at cryogenic temperatures through a few-electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, the authors observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. They also observe a transition from pure Coulomb blockade to peaks with a Fano line shape. ©2007 American Institute of Physics
History: Received 25 September 2006; accepted 11 December 2006; published 16 January 2007
Permalink: http://link.aip.org/link/?APPLAB/90/033103/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.23.Hk
    Coulomb blockade; single-electron tunneling
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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