1/f noise and percolation in carbon nanotube random networks
The 1/f noise in carbon nanotube random network films has been experimentally and theoretically investigated. The authors have established that the percolation process is the primary physical mechanis...
The 1/f noise in carbon nanotube random network films has been experimentally and theoretically investigated. The authors have established that the percolation process is the primary physical mechanis...
Oxidation-enhanced interdiffusion in Si1−xGex/Si1−yGey superlattices
The effects of Si surface oxidation on Si–Ge interdiffusion in epitaxial heterostructures are presented. Single crystal Si1−xGex/Si1−yGey superlattices, with a nominal Ge composition...
The effects of Si surface oxidation on Si–Ge interdiffusion in epitaxial heterostructures are presented. Single crystal Si1−xGex/Si1−yGey superlattices, with a nominal Ge composition...
Chemical routes to Ge/Si(100) structures for low temperature Si-based semiconductor applications
Appl. Phys. Lett. 90, 082108 (2007); doi:10.1063/1.2437098
Published 23 February 2007
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The authors describe very low temperature (350–420 °C) growth of atomically smooth Ge films (0.2–0.4 nm roughness) directly on Si(100) via gas-source molecular beam epitaxy. A carefully tuned admixture of (GeH3)2CH2, possessing unique pseudosurfactant properties, and conventional Ge2H6 provides unprecedented control of film microstructure, morphology, and composition. Formation of edge dislocations at the interface ensures growth of virtually relaxed monocrystalline Ge films (~40–1000 nm thick) with a threading dislocation density less than 105 cm−2 as determined by etch pit measurements. Secondary ion mass spectroscopy showed no measurable carbon incorporation indicating that C desorbs as CH4, consistent with calculated chemisorption energies.
©2007 American Institute of Physics
| History: | Received 16 November 2006; accepted 3 January 2007; published 23 February 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/90/082108/1 |
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Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
germanium,
elemental semiconductors,
silicon,
dislocation density,
secondary ion mass spectra,
desorption,
chemisorption,
semiconductor thin films,
semiconductor growth,
molecular beam epitaxial growth
- 81.15.Hi
Molecular, atomic, ion, and chemical beam epitaxy - 68.55.Ac
Thin film nucleation and growth: microscopic aspects - 79.20.Rf
Atomic, molecular, and ion beam impact and interactions with surfaces - 82.80.Ms
Mass spectrometry (chemical analysis) including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI - 68.43.Mn
Adsorption/desorption kinetics - 61.72.Hh
Indirect evidence of dislocations and other defects including resistivity, slip, creep, strains, internal friction, EPR, NMR, etc. - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (8)
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