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Cubic InN layers were grown by molecular beam epitaxy on buffer layers of indium oxide prepared onto sapphire (0001) substrates. The structure was analyzed by means of electron diffraction and transmi...
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The authors report room-temperature measurements of the third order nonlinear susceptibility modulus |(3)| of thick (~600  nm) InN layers. Transmission measurements provide a room-temperatur...

Critical film thickness dependence on As flux in In0.27Ga0.73As/GaAs(001) films

Appl. Phys. Lett. 90, 091902 (2007); doi:10.1063/1.2476259

Published 26 February 2007

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A. Riposan and J. Mirecki Millunchick
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109

Chris Pearson
Department of Computer Science, Engineering Science, and Physics, The University of Michigan-Flint, Flint, Michigan 48502
The transition between planar and nonplanar growth is examined for compressively strained In0.27Ga0.73As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (tSK) is strongly dependent on As flux. For high values of As flux, tSK increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM. ©2007 American Institute of Physics
History: Received 3 November 2006; accepted 12 January 2007; published 26 February 2007
Permalink: http://link.aip.org/link/?APPLAB/90/091902/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (23)
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