Laser-induced fluorescence within subwavelength metallic arrays of nanoholes indicating minimal dependence on hole periodicity
Fluorescence measurements are obtained in transmission from a thin film of rhodamine 6G molecules immersed into a 40 nm thick polymethylmethacrylate film, which has been spin coated onto an...
Fluorescence measurements are obtained in transmission from a thin film of rhodamine 6G molecules immersed into a 40 nm thick polymethylmethacrylate film, which has been spin coated onto an...
Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass
The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization ...
The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization ...
High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature
Appl. Phys. Lett. 90, 131112 (2007); doi:10.1063/1.2719160
Published 29 March 2007
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The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8×1011 cm Hz1/2/W at 120 K and a bias of −5 V with a peak detection wavelength around 4.1 µm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7×107 cm Hz1/2/W.
©2007 American Institute of Physics
| History: | Received 23 February 2007; accepted 1 March 2007; published 29 March 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/90/131112/1 |
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BibSonomy
KEYWORDS and PACS
indium compounds,
semiconductor quantum dots,
infrared detectors,
photodetectors,
self-assembly,
dark conductivity
- 85.60.Gz
Photodetectors including infrared and CCD detectors - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
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