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Noise characteristics of 100  nm scale GaAs/AlxGa1−xAs scanning Hall probes

Appl. Phys. Lett. 90, 133512 (2007); doi:10.1063/1.2717565

Published 29 March 2007

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C. W. Hicks, L. Luan, and K. A. Moler
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305

E. Zeldov and H. Shtrikman
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel
The authors have fabricated and characterized GaAs/AlxGa1−xAs two-dimensional electron gas scanning Hall probes for imaging perpendicular magnetic fields at surfaces. The Hall crosses range from 85×85  to  1000×1000  nm2. They study low-frequency noise in these probes, especially random telegraph noise, and show that low-frequency noise can be significantly reduced by optimizing the voltage on a gate over the Hall cross. The authors demonstrate a 100  nm Hall probe with a sensitivity of 0.5  G/[square root of]Hz (flux sensitivity of 0.25mPhi0/[square root of]Hz; spin sensitivity of 1.2×104µB/[square root of]Hz) at 3  Hz and 9  K. ©2007 American Institute of Physics
History: Received 6 November 2006; accepted 24 February 2007; published 29 March 2007
Permalink: http://link.aip.org/link/?APPLAB/90/133512/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.-b
    Electronic transport in nanoscale materials and structures
  • 72.70.+m
    Noise processes and phenomena in electronic transport
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 07.55.Ge
    Magnetometers for magnetic field measurements
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (20)
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