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Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

Appl. Phys. Lett. 90, 141112 (2007); doi:10.1063/1.2720712

Published 6 April 2007

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R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73  MV/cm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection. ©2007 American Institute of Physics
History: Received 15 January 2007; accepted 6 March 2007; published 6 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/141112/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.30.Kk
    Semiconductor junction diodes
  • 85.30.De
    Semiconductor-device characterization, design, and modeling
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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