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Top-emitting 230  dots/in. active-matrix polymer light-emitting diode displays on flexible metal foil substrates

Appl. Phys. Lett. 90, 151114 (2007); doi:10.1063/1.2722059

Published 11 April 2007

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Ta-Ko Chuang, Matias Troccoli, Po-Chin Kuo, Abbas Jamshidi-Roudbari, and Miltiadis K. Hatalis
Display Research Laboratory, Department of Electrical and Computer Engineering, Lehigh University, 16A Memorial Drive East, Bethlehem, Pennsylvania 18015

Ivan Biaggio
Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015

Apostolos T. Voutsas
LCD Process Technology Lab, Sharp Labs of America, Inc., Camas, Washington 98607
A top-emitting 230  dots/in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the metal foil are 37(±4)  cm2/V  s and −1.9(±0.6)  V, respectively. The light turn-on voltage of the PLED is 4.0  V. ©2007 American Institute of Physics
History: Received 22 December 2006; accepted 10 March 2007; published 11 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/151114/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.79.Kr
    Display devices, liquid-crystal devices
  • 85.60.Jb
    Light-emitting devices
  • 85.60.Pg
    Optoelectronic display systems
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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