Applied Physics Letters
   
 
 
 
Previous Article
Top-emitting 230  dots/in. active-matrix polymer light-emitting diode displays on flexible metal foil substrates
A top-emitting 230  dots/in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel foil utilizing the polycrystalline ...
Next Article
Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate
Room temperature stimulated emission and laser action with well developed longitudinal optical modes from high-quality GaN films grown on silicon substrates by metal-organic chemical-vapor deposition ...

High-power, continuous-operation intersubband laser for wavelengths greater than 10  µm

Appl. Phys. Lett. 90, 151115 (2007); doi:10.1063/1.2722190

Published 11 April 2007

You are not logged in to this journal. Log in

S. Slivken, A. Evans, W. Zhang, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
In this letter, high-power continuous-wave emission (>100  mW) and high temperature operation (358  K) at a wavelength of 10.6  µm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact. ©2007 American Institute of Physics
History: Received 2 January 2007; accepted 12 March 2007; published 11 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/151115/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (309 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.By
    Design of specific laser systems
  • YEAR: 2007

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (6)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior, Science 295, 301 (2002).
  2. J. S. Yu, S. Slivken, A. Evans, S. R. Darvish, J. Nguyen, and M. Razeghi, Appl. Phys. Lett. 88, 091113 (2006).
  3. M. Razeghi, S. Slivken, A. Tahraoui, and A. Matlis, Proc. SPIE 4287, 13 (2001).
  4. A. Evans, J. S. Yu, J. David, L. Doris, K. Mi, S. Slivken, and M. Razeghi, Appl. Phys. Lett. 84, 314 (2004).
  5. T. Aellen, M. Beck, N. Hoyler, M. Giovannini, J. Faist, and E. Gini, J. Appl. Phys. 100, 043101 (2006).
  6. J. S. Yu, S. Slivken, S. R. Darvish, A. Evans, B. Gokden, and M. Razeghi, Appl. Phys. Lett. 87, 041104 (2005).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.