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Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

Appl. Phys. Lett. 90, 152104 (2007); doi:10.1063/1.2720711

Published 10 April 2007

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B. Habib, E. Tutuc, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possible applications to spintronics. ©2007 American Institute of Physics
History: Received 26 December 2006; accepted 6 March 2007; published 10 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/152104/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.23.-b
    Electronic transport in mesoscopic systems
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 72.80.Ey
    Electrical conductivity of III–V and II–VI semiconductors
  • 81.65.Mq
    Surface oxidation
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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