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Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment

Appl. Phys. Lett. 90, 152906 (2007); doi:10.1063/1.2721845

Published 10 April 2007

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Tae Joo Park, Jeong Hwan Kim, Min Ha Seo, Jae Hyuck Jang, and Cheol Seong Hwang
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
The influence of thick (1.4  nm) and thin (0.6  nm) SiO2 interfacial layers grown by an O3 predeposition treatment during atomic layer deposition of high-k HfO2 films on the thermal stability and chemical structure of the film was investigated. It was found that the HfO2/thick SiO2 stack maintained a good thermal stability up to the postdeposition annealing at 1000  °C because Hf silicate formation was accompanied by the consumption of the interfacial SiO2 layer. On the other hand, the HfO2/thin SiO2 layer stack showed an inferior stability because Hf silicate was formed by enhanced Si diffusion from the Si substrate during the same postdeposition annealing. ©2007 American Institute of Physics
History: Received 10 January 2007; accepted 10 March 2007; published 10 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/152906/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
  • 77.55.+f
    Dielectric thin films
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • 81.15.Ef
    Vacuum deposition
  • 66.30.Ny
    Chemical interdiffusion in solids including diffusion barriers
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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