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Coherence properties of high-beta elliptical semiconductor micropillar lasers

Appl. Phys. Lett. 90, 161111 (2007); doi:10.1063/1.2724908

Published 17 April 2007

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S. Ates, S. M. Ulrich, and P. Michler
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, D-70569 Stuttgart, Germany

S. Reitzenstein, A. Löffler, and A. Forchel
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
The authors report complementary investigations on the coherence properties of spontaneous and stimulated emission from (In,Ga)As/GaAs quantum-dot-based high-quality semiconductor micropillar cavities. Low temperature microphotoluminescence measurements on an elliptically shaped micropillar revealed a clear polarization splitting (DeltaE~45  µeV) of its fundamental mode. Full conformity is found with an oscillatory behavior observed in corresponding g(1)(tau) first-order field correlation measurements. In addition, power-dependent g(1)(tau) series on a single polarization component of the lasing mode have systematically revealed a strong coherence time increase from tauc~25  to  ~430  ps, which traces the change of emission characteristics from thermal to coherent light. ©2007 American Institute of Physics
History: Received 7 March 2007; accepted 16 March 2007; published 17 April 2007
Permalink: http://link.aip.org/link/?APPLAB/90/161111/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.55.Sa
    Microcavity and microdisk lasers
  • 42.60.By
    Design of specific laser systems
  • 42.60.Da
    Laser resonators, cavities, amplifiers, arrays, and rings
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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