Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated....
High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated....
Optically produced cross patterning based on local dislocations inside MgO single crystals
Here, the authors demonstrate a unique technique to form dense dislocations locally inside a single crystal with a rocksalt-type structure using femtosecond laser irradiation for the first time, to ou...
Here, the authors demonstrate a unique technique to form dense dislocations locally inside a single crystal with a rocksalt-type structure using femtosecond laser irradiation for the first time, to ou...
Focused-ion-beam-directed nucleation of InAs quantum dots
Appl. Phys. Lett. 90, 163109 (2007); doi:10.1063/1.2724927
Published 17 April 2007
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GaAs buffer layers were patterned with Ga+ ions via a focused ion beam and then overgrown with InAs. Atomic force microscopy reveals a strong influence of the ion dose upon subsequent formation of InAs quantum dots. Uniformly dosed areas show an apparent reduction in the critical thickness for quantum dot formation and the area density of the dots increases with increasing ion dose, which is related to ion beam induced roughening of the surface.
©2007 American Institute of Physics
| History: | Received 2 February 2007; accepted 19 March 2007; published 17 April 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/90/163109/1 |
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Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
indium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum dots,
focused ion beam technology,
nucleation,
buffer layers,
ion beam effects,
atomic force microscopy,
surface roughness,
ion-surface impact
- 81.07.Ta
Quantum dots: fabrication and characterization - 81.05.Ea
III–V semiconductors: fabrication, treatment, testing and analysis - 61.80.Jh
Ion radiation effects - 61.82.Fk
Radiation effects on semiconductors - 68.35.Bs
Structure of clean solid surfaces (reconstruction) - 79.20.Rf
Atomic, molecular, and ion beam impact and interactions with surfaces - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
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