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Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction

Appl. Phys. Lett. 90, 222111 (2007); doi:10.1063/1.2745254

Published 31 May 2007

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Kyle S. McKay, Felix P. Lu, Jungsang Kim, Changhyun Yi, and April S. Brown
Fitzpatrick Institute for Photonics, Electrical and Computer Engineering Department, Duke University, Durham, North Carolina 27708

Aaron R. Hawkins
Electrical and Computer Engineering Department, Brigham Young University, 459 Clyde Building, Provo, Utah 84602
p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and −0.1  eV, respectively, indicating a type-II band alignment. ©2007 American Institute of Physics
History: Received 24 January 2007; accepted 9 May 2007; published 31 May 2007
Permalink: http://link.aip.org/link/?APPLAB/90/222111/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.20.At
    Surface states, band structure, electron density of states
  • 79.40.+z
    Thermionic emission (from surfaces)
  • 66.30.Ny
    Chemical interdiffusion in solids including diffusion barriers
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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