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Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12  µm

Appl. Phys. Lett. 90, 231108 (2007); doi:10.1063/1.2746943

Published 5 June 2007

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Binh-Minh Nguyen, Darin Hoffman, Yajun Wei, Pierre-Yves Delaunay, Andrew Hood, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
The authors report the dependence of the quantum efficiency on device thickness of type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12  µm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12  µm cutoff wavelength photodiodes with a pi-region thickness of 6.0  µm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×1011  cm  sqrt(Hz)/W). ©2007 American Institute of Physics
History: Received 6 March 2007; accepted 15 May 2007; published 5 June 2007
Permalink: http://link.aip.org/link/?APPLAB/90/231108/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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