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Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation

Appl. Phys. Lett. 90, 233513 (2007); doi:10.1063/1.2747172

Published 11 June 2007

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Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208

Vaidya Nathan
Air Force Research Laboratory, AFRL/VSSS, Kirtland, New Mexico 87117
Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400  to  25×25  µm2, with a cutoff wavelength of ~11  µm, exhibited near bulk-limited R0A values of ~12  Omega  cm2, surface resistivities in excess of 104  Omega  cm, and very uniform current-voltage behavior at 77  K. ©2007 American Institute of Physics
History: Received 18 April 2007; accepted 14 May 2007; published 11 June 2007
Permalink: http://link.aip.org/link/?APPLAB/90/233513/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 81.65.Rv
    Surface passivation
  • 79.70.+q
    Field emission, ionization, evaporation, and desorption
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)
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