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Nanometer spaced electrodes using selective area atomic layer deposition

Appl. Phys. Lett. 90, 253102 (2007); doi:10.1063/1.2749429

Published 18 June 2007

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R. Gupta and B. G. Willis
Department of Chemical Engineering, University of Delaware, Newark, Delaware 19716
Nanoelectrodes with spacing controlled between 1 and 10  nm with subnanometer increment have been achieved using atomic layer deposition. Field emission and metal-vacuum-metal tunneling are used to characterize the electrode properties in situ during growth. The current-voltage data is modeled and gives electrode spacing of 1.0±0.2  nm, a barrier height of 4.5  eV, and electrode radius of 10  nm. Temperature variation from 26  to  235  °C changes the spacing by 0.05  nm, as calculated from electrical data. This is close to 0.1  nm expected from thermal expansion. Exposing to air reduces the barrier height to 2.15  eV, which is explained by the growth of a thin metal oxide layer. ©2007 American Institute of Physics
History: Received 7 February 2007; accepted 23 May 2007; published 18 June 2007
Permalink: http://link.aip.org/link/?APPLAB/90/253102/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Ef
    Vacuum deposition
  • 81.07.Bc
    Nanocrystalline materials: fabrication and characterization
  • 79.70.+q
    Field emission, ionization, evaporation, and desorption
  • 73.40.Gk
    Tunneling (electronic transport)
  • 73.40.Ns
    Electrical properties of metal–nonmetal contacts
  • 65.40.De
    Thermal expansion; thermomechanical effects (crystalline solids)
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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