Geiger-mode operation of back-illuminated GaN avalanche photodiodes
Appl. Phys. Lett. 91, 041104 (2007); doi:10.1063/1.2759980
Published 23 July 2007
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The authors report the Geiger-mode operation of back-illuminated GaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back illumination in order to enhance hole-initiated multiplication. The spectral response in Geiger-mode operation was analyzed under low photon fluxes. Single photon detection capabilities were demonstrated in devices with areas ranging from 225 to 14063 µm2. Single photon detection efficiency of 20% and dark count rate <10 kHz were achieved in the smallest devices.
©2007 American Institute of Physics
| History: | Received 16 May 2007; accepted 19 June 2007; published 23 July 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/91/041104/1 |
KEYWORDS and PACS
avalanche photodiodes,
gallium compounds,
III-V semiconductors,
photodetectors,
wide band gap semiconductors
- 85.60.Gz
Photodetectors including infrared and CCD detectors - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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