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Valence band anticrossing in GaBixAs1−x

Appl. Phys. Lett. 91, 051909 (2007); doi:10.1063/1.2768312

Published 31 July 2007

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K. Alberi and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 and Department of Materials Science and Engineering, University of California, Berkeley, California 94720

W. Walukiewicz and K. M. Yu
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

K. Bertulis and A. Krotkus
Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT 01108, Lithuania
The optical properties of GaBixAs1−x(0.04<x<0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the band gap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms. ©2007 American Institute of Physics
History: Received 9 April 2007; accepted 12 July 2007; published 31 July 2007
Permalink: http://link.aip.org/link/?APPLAB/91/051909/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 71.55.Eq
    Impurity and defect levels in III–V semiconductors
  • 71.70.Ej
    Spin–orbit coupling, Zeeman and Stark splitting, Jahn–Teller effect (condensed matter)
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 68.55.-a
    Thin film structure and morphology
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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  1. W. Huang, K. Oe, G. Feng, and M. Yoshimoto, J. Appl. Phys. 98, 053505 (2005).
  2. S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje, Appl. Phys. Lett. 82, 3874 (2003).
  3. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, and F. Schiettekatte, Appl. Phys. Lett. 82, 2245 (2003).
  4. J. Yoshida, T. Kita, O. Wada, and K. Oe, Jpn. J. Appl. Phys., Part 1 42, 371 (2003).
  5. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, and T. Tiedje, Phys. Rev. Lett. 97, 067205 (2006).
  6. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Phys. Rev. B 71, 155201 (2005).
  7. J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, W. Shan, J. W. Ager III, A. Kimura, H. F. Tang, and T. F. Kuech, Phys. Rev. B 70, 115214 (2004).
  8. J. Wu, W. Walukiewicz, K. M. Yu, E. E. Haller, I. Miotkowski, A. K. Ramdas, Ching-Hau Su, I. K. Sou, R. C. C. Perera, and J. D. Denlinger, Phys. Rev. B 67, 035207 (2003).
  9. K. Alberi, J. Wu, W. Walukiewicz, K. M. Yu, O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y.-J. Cho, and J. Furdyna, Phys. Rev. B 75, 045203 (2007).
  10. F. A. Trumbore, M. Gershenzon, and D. G. Thomas, Appl. Phys. Lett. 9, 4 (1966).
  11. K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pacebutas, R. Adomavicius, G. Molis, and S. Marcinkevicius, Appl. Phys. Lett. 88, 201112 (2006).
  12. D. E. Aspnes, Surf. Sci. 37, 418 (1973).

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