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Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Appl. Phys. Lett. 91, 063507 (2007); doi:10.1063/1.2768635

Published 8 August 2007

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Meijun Lu
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 and Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716

Stuart Bowden and Ujjwal Das
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716

Robert Birkmire
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 and Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200  °C) deposited p- and n-type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization. ©2007 American Institute of Physics
History: Received 25 May 2007; accepted 12 July 2007; published 8 August 2007
Permalink: http://link.aip.org/link/?APPLAB/91/063507/1

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KEYWORDS and PACS

Keywords
PACS
  • 84.60.Jt
    Photoelectric conversion: solar cells and arrays
  • 81.65.Rv
    Surface passivation
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (9)

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