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Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Appl. Phys. Lett. 91, 071120 (2007); doi:10.1063/1.2770655

Published 16 August 2007

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D. J. Rogers and F. Hosseini Teherani
Nanovation SARL, 103 bis Rue de Versailles, Orsay 91400, France

A. Ougazzaden
Georgia Institute of Technology, UMI 2958, GT-CNRS, 2-3 Rue Marconi, 57070 Metz, France

S. Gautier
LMOPS, UMR CNRS 7132, Université de Metz and SUPELEC, 2 Rue E. Belin, 57070 Metz, France

L. Divay
Université de Technologie de Troyes, 10-12 Rue Marie Curie, 10010 Troyes Cedex, France

A. Lusson
GEMAC, CNRS UMR 8635, UVSQ, 1 Place Aristide Briand, 92190 Meudon, France

O. Durand, F. Wyczisk, and G. Garry
Thales Research and Technology France, Route Départementale 128, F-91767 Palaiseau Cedex, France

T. Monteiro, M. R. Correira, M. Peres, and A. Neves
Departamento de Fisica e I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal

D. McGrouther and J. N. Chapman
Department of Physics & Astronomy, University of Glasgow, Glasgow G12 8QQ, Scotland

M. Razeghi
CQD, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice. ©2007 American Institute of Physics
History: Received 18 June 2007; accepted 20 July 2007; published 16 August 2007
Permalink: http://link.aip.org/link/?APPLAB/91/071120/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Kk
    Vapor phase epitaxy; growth from vapor phase
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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  1. P. Kung and M. Razeghi, Opto-Electron. Rev. 8, 3 (2000).
  2. F. Hamdani, M. Yeadon, D. J. Smith, H. Tang, W. Kim, A. Salvador, A. E. Botchkarev, J. M. Gibson, A. Y. Polyakov, M. Skowronski, and H. Morkoc, J. Appl. Phys. 83, 983 (1998).
  3. X. Gu, M. A. Reshchikov, A. Teke, D. Johnstone, H. Morkoc, B. Nemeth, and J. Nause, Appl. Phys. Lett. 84, 2268 (2004).
  4. S. W. Lee, T. Minegishi, W. H. Lee, H. Goto, H. J. Lee, S. H. Lee, Hyo-Jong Lee, J. S. Ha, T. Goto, T. Hanada, M. W. Cho, and T. Yao, Appl. Phys. Lett. 90, 061907 (2007).
  5. A. Kobayashi, H. Fujioka, J. Ohta, and M. Oshima, Jpn. J. Appl. Phys., Part 1 43, 53 (2004).
  6. R. P. Wang, H. Muto, Y. Yamada, and T. Kusumori, Thin Solid Films 411, 69 (2002).
  7. S. Gu, R. Zhang, J. Sun, L. Zhang, and T. F. Kuech, Appl. Phys. Lett. 76, 3454 (2000).
  8. T. Detchprohm, K. Hiramatsu, H. Amano, and I. Akasaki, Appl. Phys. Lett. 61, 2688 (1992).
  9. L. T. Romano, B. S. Krusor, and R. J. Molnar, Appl. Phys. Lett. 71, 2283 (1997).
  10. N. Li, E.-H. Park, Y. Huang, S. Wang, A. Valencia, B. Nemeth, J. Nause, and I. Ferguson, Proc. SPIE 6337, 63370Z (2006).
  11. A. Strittmatter, A. Krost, V. Turck, M. Straßburg, D. Bimberg, J. Blasing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, and B. K. Meyer, Mater. Sci. Eng., B 59, 29 (1999).
  12. D. J. Rogers, F. Hosseini Téherani, A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, and G. Garry, Proc. SPIE 5732, 412 (2005).
  13. R. Paszkiewicz, B. Paszkiewicz, R. Korbutowicz, J. Kozlowski, M. Tlaczala, L. Bryja, R. Kudrawiec, and J. Misewicz, Cryst. Res. Technol. 36, 971 (2001).
  14. K. S. A. Butcher, A. Afifuddin, P. P.-T. Chen, M. Godlewski, A. Sczerbakow, E. M. Goldys, T. L. Tansley, and J. A. Freitas, Jr., J. Cryst. Growth 246, 237 (2002).
  15. J. Nause and B. Nemeth, The Third International Workshop on ZnO and Related Materials, Sendai, Japan, 2004 (unpublished).
  16. A. Mircea, A. Ougazzaden, Ph. Dast'e, Y. Gao, C. Kazmierski, J.-C. Bouley, and A. Carenco, J. Cryst. Growth 93, 235 (1988).
  17. C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, A. Sirenko, and A. Ougazzaden, Superlattices Microstruct. 40, 476 (2006).

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