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Low-threshold surface-passivated photonic crystal nanocavity laser

Appl. Phys. Lett. 91, 071124 (2007); doi:10.1063/1.2769957

Published 17 August 2007

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Dirk Englund
Department of Applied Physics, Stanford University, Stanford, California 94305

Hatice Altug
Electrical and Computer Engineering Department, Boston University, Boston, Massachusetts 02215

Jelena Vučković
Ginzton Laboratory, Stanford University, Stanford, California 94305
The efficiency and operating range of a photonic crystal laser are improved by passivating the In–GaAs quantum well gain medium and GaAs membrane using a (NH4)S treatment. The passivated laser shows a fourfold reduction in nonradiative surface recombination rate, resulting in a fourfold reduction in lasing threshold. A three-level carrier dynamics model explains the results and shows that typical parameters of such lasers lead to a lasing threshold as much determined by surface recombination as by the overall impact of the cavity quality factor. Surface passivation therefore appears crucial in operating such lasers under practical conditions. ©2007 American Institute of Physics
History: Received 22 March 2007; accepted 19 July 2007; published 17 August 2007
Permalink: http://link.aip.org/link/?APPLAB/91/071124/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Tv
    Photonic crystal lasers and coherent effects
  • 42.60.Lh
    Laser efficiency, stability, gain, and other operational parameters
  • 42.60.Da
    Laser resonators, cavities, amplifiers, arrays, and rings
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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