Scaling in back-illuminated GaN avalanche photodiodes
Appl. Phys. Lett. 91, 073513 (2007); doi:10.1063/1.2772199
Published 15 August 2007
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Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 µm2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.
©2007 American Institute of Physics
| History: | Received 10 May 2007; accepted 25 July 2007; published 15 August 2007 |
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REFERENCES (14)
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- K. A. McIntosh, R. J. Molnar, L. J. Mahoney, A. Lightfoot, M. W. Geis, K. M. Molvar, I. MeIngailis, R. L. Aggarwal, W. D. Goodhue, S. S. Choi, D. L. Spears, and S. Verghese, Appl. Phys. Lett. 75, 3485 (1999).
- J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 76, 924 (2000).
- A. Osinsky, M. S. Shur, R. Gaska, and Q. Chen,
Electron. Lett. 34, 691 (1998) . - P. Kung, R. McClintock, J. L. Pau, K. Minder, C. Bayram, and M. Razeghi,
Proc. SPIE 6479, 64791J (2007) . - T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, Appl. Phys. Lett. 90, 163506 (2007).
- R. McClintock, A. Yasan, K. Mayes, P. Kung, and M. Razeghi,
Proc. SPIE 5732, 175 (2005) . - R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, Appl. Phys. Lett. 90, 141112 (2007).
- R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi,
Proc. SPIE 5359, 434 (2004) . - J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, Jr., and J. F. Schetzina, MRS Internet J. Nitride Semicond. Res. 4S1, 1 (1999).
- A. Yasan, R. McClintock, K. A. Mayes, D. J. Shiell, S. R. Darvish, P. Kung, and M. Razeghi,
Proc. SPIE 5359, 434 (2004) . - E. Monroy, F. Calle, J. L. Pau, F. J. Sanchez, E. Munoz, F. Omnes, B. Beaumont, and P. Gibart, J. Appl. Phys. 88, 2081 (2000).
- X. Guo, A. L. Beck, X. Li, J. C. Campbell, D. Emerson, and J. Sumakeris,
IEEE J. Quantum Electron. 41, 562 (2005) . - B. Yang, T. Li, K. Heng, C. Collins, S. Wang, J. C. Carrano, R. D. Dupuis, J. C. Campbell, M. J. Schurman, and I. T. Ferguson,
IEEE J. Quantum Electron. 36, 1389 (2000) . - J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, and K. Evans, Appl. Phys. Lett. 89, 01112 (2006).







