Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
The effect of GaP strain compensation layers was investigated on ten-layer InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the n...
Next Article
Highly efficient and stable white light organic light-emitting devices
A highly efficient two-element white light organic light-emitting device with a sky blue dopant BUBD-1 and a yellow dopant TBRb was fabricated. The device achieved an electroluminescence efficiency of...

Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection

Appl. Phys. Lett. 91, 073516 (2007); doi:10.1063/1.2768884

Published 15 August 2007

You are not logged in to this journal. Log in

H. W. Li, B. E. Kardynal, P. See, and A. J. Shields
Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom

P. Simmonds, H. E. Beere, and D. A. Ritchie
Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58×10−6  ns−1 for 1310  nm photons. ©2007 American Institute of Physics
History: Received 18 May 2007; accepted 16 July 2007; published 15 August 2007
Permalink: http://link.aip.org/link/?APPLAB/91/073516/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (363 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Kk
    Semiconductor junction diodes
  • 85.30.Mn
    Semiconductor junction breakdown and tunneling devices including resonance tunneling devices
  • 85.35.Be
    Quantum well devices including quantum dots, quantum wires, etc
  • YEAR: 2007

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. N. Gisin, G. Ribordy, W. Tittel, and H. Zbinden, Rev. Mod. Phys. 74, 145 (2002).
  2. C. Gobby, Z. L. Yuan, and A. J. Shields, Appl. Phys. Lett. 84, 3762 (2004).
  3. M. A. Jaspan, J. L. Habif, R. H. Hadfield, and S. W. Nam, Appl. Phys. Lett. 89, 031112 (2006).
  4. H. Takesue, E. Diamanti, C. Langrock, M. M. Fejer, and Y. Yamamoto, Opt. Express 14, 13067 (2006).
  5. A. Yoshizawa and H. Tsuchida, Jpn. J. Appl. Phys., Part 1 40, 200 (2001).
  6. G. Ribordy, J.-D. Gautier, H. Zbinden, and N. Gisin, Appl. Opt. 37, 2272 (1998).
  7. D. Stucki, G. Ribordy, A. Stefanov, and H. Zbinden, J. Mod. Opt. 47, 1967 (2001).
  8. A. J. Shields, M. P. O'Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, Appl. Phys. Lett. 76, 3673 (2000).
  9. J. C. Blakesley, P. See, A. J. Shields, B. E. Kardynal, P. Atkinson, I. Farrer, and D. A. Ritchie, Phys. Rev. Lett. 94, 067401 (2005).
  10. S. S. Hees, B. K. Kardynal, P. See, A. J. Shields, I. Farrer, and D. V. Ritchie, Appl. Phys. Lett. 89, 153510 (2006).
  11. H. X. Li, T. Daniels-Race, and M.-A. Hasan, Appl. Phys. Lett. 80, 1367 (2002).
  12. H. W. Li, P. Simmonds, H. E. Beere, B. E. Kardynal, P. See, D. A. Ritchie, and A. J. Shields, Phys. Status Solidi C 3, 4035 (2006).
  13. S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, J. Appl. Phys. 98, 013503 (2005).
  14. F. Fossard, A. Helman, G. Fishman, F. H. Julien, J. Brault, M. Gendry, E. Péronne, A. Alexandrou, S. E. Schacham, G. Bahir, and E. Finkman, Phys. Rev. B 69, 155333 (2004).
  15. H. Mizuta and T. Tanoue, The Physics and Applications of Resonant Tunnelling Diodes (Cambridge University Press, Cambridge, 1995), 113.
  16. D. H. Chow, J. N. Sehulman, E. Özbay, and D. M. Bloom, Appl. Phys. Lett. 61, 1685 (1992).
  17. B. P. Keller, J. C. Yen, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 65, 2159 (1994).
  18. B. E. Kardynal, A. J. Shields, N. S. Beattie, I. Farrer, K. Cooper, and D. A. Ritchie, Appl. Phys. Lett. 84, 419 (2004).
  19. S. S. Hees, B. K. Kardynal, P. See, A. J. Shields, I. Farrer, and D. V. Ritchie (unpublished).
  20. S. Schulz, A. Schramm, C. Heyn, and W. Hansen, Phys. Rev. B 74, 033311 (2006).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics