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Passivation of type-II InAs/GaSb double heterostructure

Appl. Phys. Lett. 91, 091112 (2007); doi:10.1063/1.2776353

Published 28 August 2007

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Pierre-Yves Delaunay, Andrew Hood, Binh Minh Nguyen, Darin Hoffman, Yajun Wei, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
Focal plane array fabrication requires a well passivated material that is resistant to aggressive processes. The authors report on the ability of type-II InAs/GaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques. The heterostructure consisting of two wide band gap (5  µm) superlattice contacts and a low band gap active region (11  µm) exhibits an R0A averaging of 13  Omega  cm2. The devices passivated with SiO2, Na2S and SiO2 or polyimide did not degrade compared to the unpassivated sample and the resistivity of the sidewalls increased to 47  kOmega  cm. ©2007 American Institute of Physics
History: Received 12 July 2007; accepted 5 August 2007; published 28 August 2007
Permalink: http://link.aip.org/link/?APPLAB/91/091112/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Kp
    Electrical properties of III–V semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 81.65.Rv
    Surface passivation
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (9)
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