Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes
Appl. Phys. Lett. 91, 143507 (2007); doi:10.1063/1.2795086
Published 2 October 2007
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Capacitance-voltage measurements in conjunction with dark current measurements on InAs/GaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n-type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32
cm2 for a 100% cutoff of 12.05 µm
©2007 American Institute of Physics
cm2 for a 100% cutoff of 12.05 µm
©2007 American Institute of Physics
| History: | Received 30 July 2007; accepted 15 September 2007; published 2 October 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/91/143507/1 |
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0003-6951 (print)
1077-3118 (online)
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