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Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes

Appl. Phys. Lett. 91, 143507 (2007); doi:10.1063/1.2795086

Published 2 October 2007

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Darin Hoffman, Binh-Minh Nguyen, Pierre-Yves Delaunay, Andrew Hood, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA

Joe Pellegrino
Night Vision and Electronic Sensors Directorate, Fort Belvoir, Virginia 22060, USA
Capacitance-voltage measurements in conjunction with dark current measurements on InAs/GaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n-type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4  to  32  Omega  cm2 for a 100% cutoff of 12.05  µm ©2007 American Institute of Physics
History: Received 30 July 2007; accepted 15 September 2007; published 2 October 2007
Permalink: http://link.aip.org/link/?APPLAB/91/143507/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 07.57.Kp
    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)

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