Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity
Metal-semiconductor-metal deep-ultraviolet detectors with electrode spacings from 0.14 to 10 µm have been fabricated on a homoepitaxial diamond thin film grown o...
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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance fre...
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance fre...
Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
Appl. Phys. Lett. 91, 163511 (2007); doi:10.1063/1.2800808
Published 18 October 2007
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We presented an alternative design of type II superlattice photodiodes with the insertion of a mid-wavelength infrared M-structure AlSb/GaSb/InAs/GaSb/AlSb superlattice for the reduction of dark current. The M-structure superlattice has a larger carrier effective mass and a greater band discontinuity as compared to the standard type II superlattices at the valence band. It acts as an effective medium that weakens the diffusion and tunneling transport at the depletion region. As a result, a 10.5 µm cutoff type II superlattice with 500 nm M-superlattice barrier exhibited a R0A of 200 
cm2 at 77 K, approximately one order of magnitude higher than the design without the barrier. The quantum efficiency of such structures does not show dependence on either barrier thickness or applied bias.
©2007 American Institute of Physics
cm2 at 77 K, approximately one order of magnitude higher than the design without the barrier. The quantum efficiency of such structures does not show dependence on either barrier thickness or applied bias.
©2007 American Institute of Physics
| History: | Received 10 September 2007; accepted 29 September 2007; published 18 October 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/91/163511/1 |
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